Proceedings of International Conference on Applied Innovation in IT
2026/03/31, Volume 14, Issue 1, pp.547-555

Data-Driven Gas Sensing Performance of Sn-Doped NiO Thin Films


Tahseen H. Mubarak, Hiba Rashid Shakir, Fikrat Hikmat Jasim, Shaymaa A. Hussein, Nadir Fadhil Habubi, Sami Salman Chiad and Yassin Hasan Kadhim


Abstract: This study explores the influence of tin (Sn) doping at concentrations of 0%, 2%, and 4% synthesized via chemical spray pyrolysis (CSP) at 400°C. XRD analysis verified the construction of a cubic NiO phase with strong peaks that match the (111), (200), and (220) planes. Sn incorporation enhanced crystallinity, as evidenced by a raise in grain size from 13.14 nm (undoped) to 17.51 nm (4% Sn), along with a decrease in dislocation density (from 58.53 to 45.71 × 10¹⁴ lines/m²) and lattice strain (from 29.63 to 25.37 × 10⁻⁴). Atomic force microscopy (AFM) analysis revealed a smoother film surface with increasing Sn content, indicated by a reduction in average surface roughness from 11.71 nm to 4.83 nm. Optical characterization showed a decrease in both the optical bandgap (from 3.86 eV to 3.75 eV) and transmittance (from 96.1% to 89.5%) as Sn concentration increased, attributed to defect-related absorption. Gas-sensing measurements revealed that undoped NiO exhibited the highest hydrogen sensitivity (29.56% at 225 ppm), which diminished to 12.3% for films doped with 4% Sn, likely due to enhanced charge carrier recombination. These findings emphasize the balance between improved structural and optical properties and reduced gas sensitivity, identifying undoped NiO as the most effective candidate for hydrogen sensing applications.

Keywords: Nio, Sn Doping, CSP, Gas Sensing, Structural Properties, Optical Properties.

DOI: Under indexing

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