10.25673/122149">


Proceedings of International Conference on Applied Innovation in IT
2025/08/29, Volume 13, Issue 4, pp.443-448

Investigating the Strain Effect in Nickel- and Tin-Doped Silicon Schottky Barrier Diodes Under Hydrostatic Pressure


Rustam Khamidov and Odiljon Mamatkarimov


Abstract: This work investigates the strain-sensitivity of Schottky barrier structures fabricated on silicon pre-doped with isovalent impurities and subsequently compensated with deep-level nickel impurities. The study demonstrates that while isovalent impurities themselves typically do not alter electrophysical parameters, the presence of deep-level nickel impurities significantly enhances the semiconductor's sensitivity to mechanical stress. The research was conducted under all-round hydrostatic pressure (AHP) to evaluate the piezoresistive properties of these structures. A key challenge addressed is the creation of Schottky barrier diodes (SBDs) that combine high strain-sensitivity - requiring high-resistivity compensated material - with a significant contact potential difference, which necessitates low-resistivity material for effective barrier formation. We show that pre-doping silicon with isovalent tin impurities inhibits uniform nickel diffusion, resulting in Si structures with a non-uniform resistivity profile. This engineered structure features a highly compensated region for enhanced strain sensitivity and a near-surface low-resistivity zone for forming an effective Au-Sb Schottky barrier. Current-voltage characterization under AHP reveals that the relative change in forward current (ΔI/I₀) in Si-based SBDs shows a strong voltage dependence with a characteristic peak, attributed to pressure-induced voltage redistribution between the potential barrier and compensated base region. Significantly, enhanced strain-sensitivity is achieved even in high-resistivity (10⁴-10⁵ Ω·cm) Si structures, a result unattainable in uniformly compensated Si samples. These findings establish that controlled non-uniform impurity distribution through isovalent pre-doping is crucial for developing highly sensitive piezoresistive semiconductor devices.

Keywords: Schottky Barrier Diode, Hydrostatic Pressure, Strain Sensitivity, Nickel Doping, Isovalent Impurities, Deep-Level Centers, Silicon Compensation, Voltage Redistribution Effect.

DOI: 10.25673/122149

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References:

  1. P. Pichler, “Isovalent impurities,” in Intrinsic Point Defects, Impurities and Their Diffusion in Silicon, Computational Microelectronics, Vienna, Austria: Springer, 2004, ch. 4, doi: 10.1007/978-3-7091-0597-9_4.
  2. L. Millns, Deep Levels of Impurities in Semiconductors. Moscow, USSR, 1977, p. 547.
  3. H. Li, P. G. O’Brien, N. P. Kherani, and S. Zukotynski, “Strain sensitivity of band gaps of Sn-containing semiconductors,” Phys. Rev. B, vol. 91, no. 4, p. 045204, 2015.
  4. T. Yamada, D. M. Scott, J. M. Gerger, and C. D. Ellis, “High piezoresistance in nickel-doped silicon for MEMS strain sensors,” J. Micromech. Microeng., vol. 26, no. 6, p. 065017, May 2016, doi: 10.1088/0960-1317/26/6/065017.
  5. K. G. Kravchenko, A. A. Golovanov, and V. A. Gridchin, “Piezoresistive effect in structures with deep impurity levels in silicon,” Russ. Microelectron., vol. 48, pp. 56–61, 2019, doi: 10.1134/S1063739719010065.
  6. O. O. Mamatkarimov, R. Khamidov, and A. Abdukarimov, “The relative current change, concentration and carrier mobility in silicon samples doped with nickel under pulse hydrostatic pressure,” Mater. Today: Proc., vol. 17, pp. 442–445, 2019, doi: 10.1016/j.matpr.2019.06.473.
  7. S. M. Sze and K. K. Ng, Physics of Semiconductor Devices, 3rd ed. Hoboken, NJ, USA: Wiley, 2006.
  8. H. Indusekhar and V. Kumar, “Electrical properties of nickel-related deep levels in silicon,” J. Appl. Phys., vol. 61, no. 4, pp. 1449–1455, 1987.
  9. F. M. Talipov and R. Kh. Khamidov, “Effect of internal elastic stresses on diffusion and nickel distribution in silicon,” Tech. Phys. Lett., vol. 19, no. 1, pp. 59–60, 1993.
  10. S. M. Sze, Y. Li, and K. K. Ng, Physics of Semiconductor Devices, 4th ed. Hoboken, NJ, USA: Wiley, 2021.
  11. A. A. Barlian, W. T. Park, J. R. Mallon, A. J. Rastegar, and B. L. Pruitt, “Review: Semiconductor piezoresistance for microsystems,” Proc. IEEE, vol. 97, no. 3, pp. 513–552, 2009, doi: 10.1109/JPROC.2009.2013612.

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